Memory controllers, memory systems, and memory modules

ABSTRACT

A memory controller includes an error correction code (ECC) engine and an error managing circuit. The ECC engine is configured to, during a read operation, perform an ECC decoding on a read codeword set to generate a first and second syndrome associated with a correctable error in a user data set included in the read codeword set, correct the correctable error based on the first syndrome and the second syndrome, and provide the second syndrome to the error managing circuit. The error managing circuit is configured to accumulate second syndromes associated with a plurality of correctable errors and obtained through a plurality of read operations as a plurality of second syndromes, store the plurality of second syndromes, compare the plurality of second syndromes with an error pattern set, and predict an occurrence of an uncorrectable error associated with the correctable error in a memory region based on the comparison.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority under 35 USC § 119 to Korean PatentApplication No. 10-2021-0153988, filed on Nov. 10, 2021, in the KoreanIntellectual Property Office, and to Korean Patent Application No.10-2022-0003176, filed on Jan. 10, 2022, in the Korean IntellectualProperty Office, the disclosures of which are incorporated by referenceherein in their entirety.

TECHNICAL FIELD

The inventive concept relates generally to memory devices, and moreparticularly to memory controllers, memory systems, and memory modules.

DISCUSSION OF RELATED ART

A memory device may be implemented using a semiconductor such as silicon(Si), germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP),or the like. Examples of memory devices include volatile memory devicesand nonvolatile memory devices. A nonvolatile memory device retainsstored data when a power supply is shut down, and a volatile memorydevice is a memory device in which stored data is lost when a powersupply is shut down. An example of volatile memory is dynamic randomaccess memory (DRAM). A volatile memory device can be implemented in acomputing system as a working memory, a buffer memory, a main memory, orthe like. Accordingly, there is a need in the art for efficient errorcorrection in a memory device.

SUMMARY

Aspects of the present disclosure provide a memory controller, a memorysystem, and a memory module capable of efficiently managing errors thatmay occur in a memory device.

According to some aspects of the present disclosure, a memory controlleris provided. The memory controller is configured to control a memorymodule including a plurality of data chips, a first parity chip and asecond parity chip. The memory controller includes an error correctioncode (ECC) engine, a central processing unit (CPU) configured to controlthe ECC engine, and an error managing circuit. The ECC engine isconfigured to, during a read operation, perform an ECC decoding on aread codeword set from the memory module to generate a first syndromeand a second syndrome associated with a correctable error in a user dataset included in the read codeword set, correct the correctable errorbased on the first syndrome and the second syndrome, and provide thesecond syndrome to the error managing circuit. The error managingcircuit is configured to accumulate second syndromes associated with aplurality of correctable errors and obtained through a plurality of readoperations as a plurality of second syndromes, store the plurality ofsecond syndromes, compare the plurality of second syndromes with anerror pattern set, and predict an occurrence of an uncorrectable errorassociated with the correctable error in a memory region of theplurality of data chips based on the comparison.

According to some aspects of the present disclosure, a memory system isprovided. The memory system includes a memory module including aplurality of data chips, a first parity chip, and a second parity chip.The memory system further includes a memory controller configured tocontrol the memory module and including an error correction code (ECC)engine, a central processing unit (CPU) configured to control the ECCengine, and an error managing circuit. The ECC engine is configured to,during a read operation, perform an ECC decoding on a read codeword setreceived from the memory module to generate a first syndrome and asecond syndrome. The read codeword set includes a user data set, thesecond syndrome is associated with a correctable error, and the userdata set includes the correctable error. The ECC engine is furtherconfigured to correct the correctable error in the user data set basedon the first syndrome and the second syndrome and provide the secondsyndrome to the error managing circuit. The error managing circuit isconfigured to obtain second syndromes associated with a plurality ofcorrectable errors through a plurality of read operations, accumulatethe second syndromes as a plurality of second syndromes, store theplurality of second syndromes, compare the plurality of second syndromeswith at least one error pattern set, and predict an occurrence of anuncorrectable error in a memory region of the plurality of data chipsassociated with the plurality of correctable errors based on thecomparison.

According to some aspects of the present disclosure, a memory module isprovided. The memory module includes a plurality of data chipsconfigured to store a user data set and meta data, a first parity chipand a second parity chip configured to store first parity data andsecond parity data, respectively, the first parity data and the secondparity data being generated based on the user data set and the metadata, and a buffer chip configured to provide the user data set and themeta data to the plurality of data chips based on a command and anaddress provided from an external memory controller and furtherconfigured to provide the first parity data and the second parity datato the first parity chip and the second parity chip, respectively. Thebuffer chip includes an error correction code (ECC) engine, a memorymanagement unit configured to control the ECC engine, and an errormanaging circuit. The ECC engine is configured to, during a readoperation, perform an ECC decoding on a read codeword set received fromthe memory module to generate a first syndrome and a second syndrome.The read codeword set includes a user data set, the second syndrome isassociated with a correctable error, and the user data set includes thecorrectable error. The ECC engine is further configured to correct thecorrectable error in the user data set based on the first syndrome andthe second syndrome and provide the second syndrome to the errormanaging circuit. The error managing circuit is configured to obtainsecond syndromes associated with a plurality of correctable errorsthrough a plurality of read operations, accumulate the second syndromesas a plurality of second syndromes, store the plurality of secondsyndromes, compare the plurality of second syndromes with at least oneerror pattern set, and predict an occurrence of an uncorrectable errorin a memory region of the plurality of data chips associated with theplurality of correctable errors based on the comparison.

Accordingly, in some embodiments, an error managing circuit mayaccumulate a plurality of syndromes obtained through a plurality of readoperations, may predict an occurrence of an uncorrectable error in amemory region of a plurality of data chips associated with a correctableerror based on the plurality of syndromes, and may determine an errormanagement policy for the memory region based on the plurality ofsyndromes. Therefore, the error managing circuit may inhibit anoccurrence of an uncorrectable error in a memory device due toaccumulated correctable errors.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects and features of the present disclosure willbecome more apparent by describing in detail embodiments thereof withreference to the accompanying drawings, in which:

FIG. 1 is a block diagram of a memory system according to at least oneembodiment;

FIG. 2 is block diagram of a memory controller of the memory system ofFIG. 1 according to at least one embodiment;

FIG. 3 illustrates data segments corresponding to a burst length in thememory system of FIG. 1 according to at least one embodiment;

FIG. 4 is a block diagram of a data chip of a memory module of FIG. 1according to at least one embodiment;

FIG. 5 illustrates a first bank array of the data chip of FIG. 4according to at least one embodiment;

FIG. 6 is a block diagram of an ECC engine of FIG. 2 according to atleast one embodiment;

FIG. 7 illustrates a parity generation matrix stored in memory of theECC engine of FIG. 6 according to at least one embodiment;

FIG. 8 illustrates an example of a base offset sub matrix that is usedfor generating the offset sub matrices of the first parity sub matrix ofFIG. 7 according to at least one embodiment;

FIG. 9 illustrates an example of a zero sub matrix in the paritygeneration matrix of FIG. 7 according to at least one embodiment;

FIG. 10 illustrates an example of an identity sub matrix in the paritygeneration matrix of FIG. 7 according to at least one embodiment;

FIG. 11 illustrates an example of an ECC encoder of the ECC engine ofFIG. 6 according to at least one embodiment;

FIG. 12 illustrates an example of a parity check matrix stored in thememory of the ECC engine of FIG. 6 according to at least one embodiment;

FIG. 13 illustrates an example of an offset sub matrix of FIG. 12according to at least one embodiment;

FIG. 14 illustrates an example of an ECC decoder of the ECC engine ofFIG. 6 according to at least one embodiment;

FIG. 15 is a block diagram of an error managing circuit of the memorycontroller of FIG. 2 according to at least one embodiment;

FIG. 16 illustrates an example of a syndrome register of the errormanaging circuit of FIG. 15 according to at least one embodiment;

FIG. 17 illustrates an example of a syndrome accumulation register ofthe error managing circuit of FIG. 15 according to at least oneembodiment;

FIG. 18 is a block diagram of an error managing circuit of the memorycontroller of FIG. 2 according to at least one embodiment;

FIG. 19 is a block diagram illustrating an example of an error countingcircuit of the error managing circuit of FIG. 18 according to at leastone embodiment;

FIG. 20 illustrates an example of a counted value of FIG. 19 accordingto at least one embodiment;

FIG. 21 illustrates an example of an error address register of FIG. 19according to at least one embodiment;

FIG. 22 is a block diagram illustrating an example of an error managerof the error managing circuit of FIG. 18 according to at least oneembodiment;

FIG. 23 is a flow chart illustrating a method of operating a memorysystem according to at least one embodiment;

FIG. 24 is a block diagram of a memory module employed by a memorysystem according to at least one embodiment;

FIG. 25 is a block diagram of an example of a buffer chip of the memorymodule of FIG. 24 according to at least one embodiment;

FIG. 26 is a block diagram of a memory system including quad-rank memorymodules according to at least one embodiment; and

FIG. 27 is a block diagram of a mobile system including a memory moduleaccording to at least one embodiment.

DETAILED DESCRIPTION

Embodiments of the present disclosure will be described more fullyhereinafter with reference to the accompanying drawings. Like referencenumerals may refer to like elements throughout the accompanyingdrawings. As used herein, the singular forms “a”, “an”, and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise.

It will be understood that, although the terms “first”, “second”, etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another element, component, region, layer, or section.Thus, a first element, component, region, layer, or section discussedbelow could be termed a second element, component, region, layer, orsection without departing from the teachings of the embodiments.

FIG. 1 is a block diagram of a memory system according to at least oneembodiment.

Referring to FIG. 1 , according to some aspects, a memory system 20includes a memory controller 100 and a memory module MM. According tosome aspects, the memory module MM includes a plurality of memory chips.According to some aspects, the plurality of memory chips includes aplurality of data chips 200_1 to 200_k, a first parity chip 200 pa, anda second parity chip 200 pb. Each of the plurality of memory chips maybe referred to as a semiconductor memory device or as a memory device.

According to some aspects, the memory controller 100 controls an overalloperation of the memory system 20. In some embodiments, the memorycontroller 100 controls an overall data exchange between a host and theplurality of memory chips. In an example, the memory controller 100writes data in the plurality of memory chips or reads data from theplurality of memory chips in response to a request from the host.

According to some aspects, the memory controller 100 issues operationcommands to the plurality of memory chips for controlling the pluralityof memory chips.

In some embodiments, each of the plurality of memory chips includes avolatile memory cell, such as a dynamic random access memory (DRAM)cell.

In some embodiments, the plurality of data chips 2001 to 200_k includesk data chips. In some embodiments, k is 16. In some embodiments, k isless than or greater than 16. Each data chip of the plurality of datachips 200_1 to 200_k may be referred to as a data memory. Each of thefirst parity chip 200 pa and the second parity chip 200 pb may bereferred to as an error correction code (ECC) memory or as a redundantmemory.

According to some aspects, the memory controller 100 transmits anaddress ADDR and a command CMD to the memory module MM. According tosome aspects, the memory controller 100 exchanges a codeword set SCWwith the memory module MM.

According to some aspects, the memory controller 100 includes an ECCengine 130. In some embodiments, the ECC engine 130 performs an ECCencoding on a user data set and meta data. In some embodiments, theencoding includes generating a parity data set using a parity generationmatrix to obtain a codeword set SCW. In some embodiments, the codewordset SCW includes the user data set, the meta data, and the parity dataset. In some embodiments, the ECC engine 130 provides the codeword setSCW to the memory module MM in a write operation of the memory system20. In some embodiments, the user data set is stored in the plurality ofdata chips 200_1 to 200_k. In some embodiments, the meta data and afirst portion of the parity data set is stored in the first parity chip200 pa. In some embodiments, a second portion of the parity data set isstored in the second parity chip 200 pb.

According to some aspects, the ECC engine 130 performs an ECC decodingon the codeword set SCW read from the memory module MM using a paritycheck matrix to generate a first syndrome and a second syndrome. As usedherein, a “syndrome” is a numerical representation of an error. In someembodiments, the ECC engine 130 corrects a correctable error in the userdata set included in the codeword set SCW based on the first syndrome.In some embodiments, the ECC engine 130 corrects a correctable error inthe user data set included in the codeword set SCW based on the secondsyndrome.

According to some aspects, the memory controller 100 includes an errormanaging circuit (EMC) 400. In some embodiments, the EMC 400 obtains thesecond syndrome via a read operation. In some embodiments, the EMC 400stores the second syndrome associated with the correctable error. Insome embodiments, the EMC 400 accumulates a plurality of secondsyndromes associated with a plurality of correctable errors via aplurality of read operations. In some embodiments, the EMC 400 storesthe plurality of second syndromes.

In some embodiments, the EMC 400 predicts an occurrence of anuncorrectable error in a memory region of the plurality of data chips2001 to 200_k associated with the plurality of correctable errors bycomparing the plurality of second syndromes with at least one of a firsterror pattern set and a second error pattern set. According to someaspects, the EMC 400 identifies that a pattern of the plurality ofsecond syndromes corresponds to a risky error pattern based on thecomparison. According to some aspects, based on the identification, theEMC 400 predicts that a probability of the occurrence of theuncorrectable error is greater than a reference probability. Accordingto some aspects, the EMC 400 repairs the at least one memory regionbased on the prediction.

Accordingly, by repairing the memory region, the EMC 400 reduces anaccumulation of correctable errors and reduces the occurrence of theuncorrectable error due to the accumulation of the correctable errors.

FIG. 2 is block diagram of a memory controller of the memory system ofFIG. 1 according to at least one embodiment.

Referring to FIG. 2 , according to some aspects, the memory controller100 includes a central processing unit (CPU) 110, a host interface 120,a data register 125, the ECC engine 130, a command buffer 190, anaddress buffer 195, and the EMC 400. According to some aspects, the ECCengine 130 includes an ECC encoder 140, an ECC decoder 150, and a memory(e.g., an ECC memory) 180.

According to some aspects, the host interface 120 receives a request REQand a user data set SDT from the host. According to some aspects, thehost interface 120 generates meta data MDT associated with the user dataset SDT. According to some aspects, the host interface 120 provides theuser data set SDT to the data register 125 and provides the meta dataMDT to the ECC encoder 140. According to some aspects, the data register125 continuously or sequentially outputs the user data set SDT to theECC engine 130.

According to some aspects, the ECC encoder 140 performs an ECC encodingon the user data set SDQ and the meta data MDT using a parity generationmatrix to generate a first codeword set SCW1. According to some aspects,the ECC encoder 140 provides the first codeword set SCW1 to the memorymodule described with reference to FIG. 1 .

According to some aspects, the ECC decoder 150 receives the secondcodeword set SCW2 from the memory module described with reference toFIG. 1 . According to some aspects, the second codeword set includes theuser data set SDQ and the meta data MDT. According to some aspects, theECC decoder 150 performs an ECC decoding on the second codeword set SCW2using the parity check matrix to output a decoding status flag DSF tothe CPU 110 and to generate a first syndrome and a second syndromeSDR_M. According to some aspects, the ECC decoder 150 corrects acorrectable error in the user data set SDQ included in the secondcodeword set SCW2 on a symbol basis to obtain a corrected user data setC_SDQ. According to some aspects, a symbol corresponds to a plurality ofdata bits in the user data set SDQ read from a data chip of theplurality of data chips. For example, a data unit read from a data chipincluded in the user data set SDQ may be referred to as a symbol.

According to some aspects, the ECC decoder 150 provides the correcteduser data set C_SDQ to the CPU 110. According to some aspects, the ECCdecoder 150 does not detect a correctable error in the user data set SDQand provides the user data set SDQ to the CPU 110.

According to some aspects, the ECC decoder 150 provides the secondsyndrome SDR_M associated with the correctable error to the EMC 400.According to some aspects, the ECC decoder 150 provides error symbolinformation ESBI associated with a symbol in which a correctable erroroccurs to the EMC 400.

According to some aspects, the memory 180 stores the parity generationmatrix and the parity check matrix.

According to some aspects, the CPU 110 receives the user data set SDQ orthe corrected user data set C_SDQ and controls the ECC engine 130, thecommand buffer 190, and the address buffer 195 via control signals inresponse to receiving the user data set SDQ or the corrected user dataset C_SDQ. In an example, the command buffer 190 stores the command CMDcorresponding to the request REQ and transmits the command CMD to thememory module MM in response to a first control signal received from theCPU 110.

In another example, the address buffer 195 stores the address ADDR andtransmits the address ADDR to the memory module MM in response to asecond control signal received from the CPU 110. In some embodiments,the address buffer 195 provides an error address EADDR associated withthe correctable error to the EMC 400.

According to some aspects, the EMC 400 accumulates a plurality of secondsyndromes SDR_M associated with a plurality of correctable errorsobtained via a plurality of read operations and stores the plurality ofsecond syndromes SDR_M on the memory module MM. According to someaspects, the EMC 400 predicts an occurrence of an uncorrectable error ina memory region of the plurality of data chips described with referenceto FIG. 1 based on the plurality of second syndromes SDR_M.

According to some aspects, the EMC 400 determines an error managementpolicy for the memory region based on the prediction. According to someaspects, the EMC 400 provides an alert signal ALRT and a repair signalRPR to the CPU 110 based on the prediction. According to some aspects,the CPU 110 is configured to identify a possibility of an occurrence ofan uncorrectable error in response to receiving the alert signal ALRT.According to some aspects, the repair signal RPR is associated withrepairing the memory region.

In some embodiments, the EMC 400 receives error addresses EADDRassociated with correctable errors detected in a plurality of readoperations on the memory module MM from the address buffer 195.According to some aspects, the EMC 400 counts the error addresses EADDRand predicts the occurrence of the uncorrectable error based on thecounting. According to some aspects, the EMC 400 predicts the occurrenceof the uncorrectable error based on the error symbol information ESBI.

FIG. 3 illustrates data segments corresponding to a burst length in thememory system of FIG. 1 according to at least one embodiment.

Referring to FIG. 3 , according to some aspects, each of the pluralityof data chips 200_1 to 200_k, the first parity chip 200 pa, and thesecond parity chip 200 pb performs a burst operation.

In some embodiments, a burst operation is an operation of writing orreading a large amount of data by sequentially increasing or decreasingan initial address provided from the memory controller 100. In someembodiments, a basic unit of the burst operation is a burst length. Inan example, a burst length is a number of units of data transferredduring the burst operation. In the example of FIG. 3 , the burst lengthis 8. According to some aspects, the burst length is less than orgreater than eight.

Referring to FIG. 3 , in some embodiments, the data sets DQ_BL1 toDQ_BLk are respectively input to and/or output from corresponding datachips of the plurality of data chips 200_1 to 200_k. In someembodiments, each of the data sets DQ_BL1 to DQ_BLk includes datasegments DQ_BL_SG11 to DQ_BL_SG18 respectively corresponding to theburst length of eight. According to some aspects, there are more than orfewer than eight data segments, as determined by the burst length. Insome embodiments, the data sets DQ_BL1 to DQ_BLk correspond to the userdata set SDQ. In an example, the data sets DQ_BL1 to DQ_BLk are includedin the user data set SDQ. According to some aspects, data units DQ1 toDQ4 of the user data SDQ are read to and/or written from the pluralityof data chips 200_1 to 200_k. In some embodiments, each of data unitsDQ1 to DQ4 are referred to as a symbol.

According to some aspects, while the burst operation is performed in theplurality of data chips 200_1 to 200_k, meta data MDT and first paritydata PRTL corresponding to the burst length are input to and/or outputfrom the first parity chip 200 pa, and first sub parity data PRTM1 andsecond sub parity data PRTM2 corresponding to the burst length are inputto and/or output from the second parity chip 200 pb. According to someaspects, second parity data PRTM includes the first sub parity dataPRTM1 and the second sub parity data PRTM2.

According to some aspects, the first parity data PRTL is referred to asan error locator parity data and is associated with locations of errorbits in the user data set SDQ. According to some aspects, the secondparity data PRTM is referred to as an error magnitude parity data and isassociated with a magnitude of (e.g., number of) error bits in the userdata set SDQ.

FIG. 4 is a block diagram of a data chip of the memory module of FIG. 1according to at least one embodiment.

Referring to FIG. 4 , according to some aspects, the data chip 200_1includes a control logic circuit 210, an address register 220, a bankcontrol logic 230, a row address multiplexer 240, a refresh counter 245,a column address latch 250, a row decoder 260, a column decoder 270, asense amplifier unit 285, an input/output (I/O) gating circuit 290, adata I/O buffer 295, and a memory cell array 300.

According to some aspects, the memory cell array 300 includes firstthrough eighth bank arrays 310 to 380. According to some aspects, therow decoder 260 includes first through eighth row decoders 260 a to 260h coupled to first through eighth bank arrays 310 to 380, respectively.According to some aspects, the column decoder 270 includes first througheighth column decoders 270 a to 270 h coupled to the first througheighth bank arrays 310 to 380, respectively. According to some aspects,the sense amplifier unit 285 includes first through eighth senseamplifiers 285 a to 285 h coupled to the first through eighth bankarrays 310 to 380, respectively.

According to some aspects, the first through eighth bank arrays 310 to380, the first through eighth row decoders 260 a to 260 h, the firstthrough eighth column decoders 270 a to 270 h, and the first througheighth sense amplifiers 285 a to 285 h form first through eighth banks.In some embodiments, each of the first through eighth bank arrays 310 to380 include a plurality of word-lines WL, a plurality of bit-lines BL,and a plurality of memory cells MC formed at intersections of theword-lines WL and the bit-lines BTL. In the example of FIG. 4 , the datachip 2001 includes eight banks. According to some aspects, the data chip200_1 includes fewer than or more than eight banks, and respectivelyfewer or more than eight bank arrays, row decoders, column decoders, andsense amplifiers corresponding to the banks.

According to some aspects, the address register 220 receives an addressADDR including a bank address BANK_ADDR, a row address ROW_ADDR, and acolumn address COL_ADDR from the memory controller 100. According tosome aspects, the address register 220 provides the received bankaddress BANK_ADDR to the bank control logic 230. According to someaspects, the address register 220 provides the received row addressROW_ADDR to the row address multiplexer 240. According to some aspects,the address register 220 provides the received column address COL_ADDRto the column address latch 250.

According to some aspects, the bank control logic 230 generates a bankcontrol signal in response to the bank address BANK_ADDR. In someembodiments, a row decoder of the first through eighth row decoders 260a to 260 h corresponding to the bank address BANK_ADDR is activated inresponse to the bank control signal. In some embodiments, a columndecoder of the first through eighth column decoders 270 a to 270 hcorresponding to the bank address BANK_ADDR is activated in response tothe bank control signal.

According to some aspects, the row address multiplexer 240 receives therow address ROW_ADDR from the address register 220 and receives arefresh row address REF_ADDR from the refresh counter 245. According tosome aspects, the row address multiplexer 240 selectively outputs therow address ROW_ADDR or the refresh row address REF_ADDR as a rowaddress RA. According to some aspects, the row address RA that is outputfrom the row address multiplexer 240 is applied to the first througheighth row decoders 260 a to 260 h.

According to some aspects, the activated row decoder of the firstthrough eighth row decoders 260 a to 260 h decodes the row address RAthat is output from the row address multiplexer 240 and activates aword-line WL corresponding to the row address RA. In an example, theactivated row decoder generates a word-line driving voltage and appliesthe word-line driving voltage to the word-line WL corresponding to therow address RA.

According to some aspects, the column address latch 250 receives thecolumn address COL_ADDR from the address register 220 and temporarilystores the received column address COL_ADDR. In some embodiments, in aburst mode, the column address latch 250 generates column addressesCOL_ADDR′ that increment from the received column address COL_ADDR.According to some aspects, the column address latch 250 applies thetemporarily stored column address COL_ADDR or a generated column addressCOL_ADDR′ to the first through eighth column decoders 270 a to 270 h.

According to some aspects, the activated column decoder of the firstthrough eighth column decoders 270 a to 270 h decodes the temporarilystored column address COL_ADDR or the generated column address COL_ADDR′that is respectively output from the column address latch 250 andcontrols the I/O gating circuit 290 to output data corresponding to thetemporarily stored column address COL_ADDR or the generated columnaddress COL_ADDR′.

According to some aspects, the I/O gating circuit 290 includes circuitryfor gating input/output data. According to some aspects, the I/O gatingcircuit 290 includes read data latches for storing data that is outputfrom the first through eighth bank arrays 310 to 380, and write driversfor writing data to the first through eighth bank arrays 310 to 380.

According to some aspects, data to be read from a bank array of thefirst through eighth bank arrays 310 to 380 is sensed by a senseamplifier coupled to the bank array from which the data is to be readand is stored in the read data latches.

According to some aspects, the data stored in the read data latches isprovided to the memory controller 100 via the data I/O buffer 295.According to some aspects, a data set DQ_BL to be written in a bankarray of the first through eighth bank arrays 310 to 380 is provided tothe data I/O buffer 295 from the memory controller 100. According tosome aspects, the data I/O buffer 295 provides the data set DQ_BL to theI/O gating circuit 290.

According to some aspects, the control logic circuit 210 controlsoperations of the data chip 200_1. In an example, the control logiccircuit 210 generates control signals for the data chip 200_1 such thatthe data chip 200_1 performs the write operation and/or the readoperation. According to some aspects, the control logic circuit 210includes a command decoder 211 that decodes the command CMD receivedfrom the memory controller 100. According to some aspects, the controllogic circuit 210 includes a mode register 212 that sets an operationmode of the data chip 200_1.

According to some aspects, each of the first parity chip 200 pa and thesecond parity chip 200 pb have a similar or substantially similarconfiguration as the data chip 200_1. According to some aspects, each ofthe first parity chip 200 pa and the second parity chip 200 pb inputand/or output corresponding parity data.

FIG. 5 illustrates a first bank array of the data chip of FIG. 4according to at least one embodiment.

Referring to FIG. 5 , according to some aspects, the first bank array310 includes a plurality of word-lines WL1 to WLm (where m is a naturalnumber greater than three), a plurality of bit-lines BTL1 to BTLn (wheren is a natural number greater than three), and a plurality of memorycells MCs disposed near intersections between the word-lines WL1 to WLmand the bit-lines BTL1 to BTLn. According to some aspects, m is anatural number equal to or greater than two. In some embodiments, n is anatural number equal to or greater than two. In some embodiments, eachof memory cell of the plurality of memory cells MCs includes a DRAM cellstructure.

In some embodiments, the plurality of word-lines WL1 to WLm to which theplurality of memory cells MCs are connected are referred to as rows ofthe first bank array 310 and the plurality of bit-lines BL1 to BLn towhich the plurality of memory cells MCs are connected are referred to ascolumns of the first bank array 310.

FIG. 6 is a block diagram of the ECC engine of the memory controller ofFIG. 2 according to at least one embodiment.

Referring to FIG. 6 , according to some aspects, the ECC engine 130includes the ECC encoder 140, the ECC decoder 150, and the memory 180.In some embodiments, the memory 180 is referred to as an ECC memory.

According to some aspects, the memory 180 is connected to the ECCencoder 140 and the ECC decoder 150. According to some aspects, thememory 180 stores a parity generation matrix PGM and a parity checkmatrix PCM.

According to some aspects, the ECC encoder 140 performs an ECC encodingon the user data set SDQ and the meta data MBT using the paritygeneration matrix PCM to generate a parity data set SPRT including thefirst parity data PRTL and the second parity data PRTM. According tosome aspects, the ECC encoder 140 generates a first codeword set SCW1including the user data set SDQ, the meta data MBT, and the parity dataset SPRT, and outputs the first codeword set SCW1.

According to some aspects, the ECC decoder 150 receives a secondcodeword set SCW2 including the user data set SDQ, the meta data MBT,and the parity data set SPRT from a memory module MM described withreference to FIG. 1 . According to some aspects, the ECC decoder 150performs an ECC decoding on the second codeword set SCW2 using theparity check matrix PCM to generate a first syndrome and a secondsyndrome SDR_M. According to some aspects, the ECC decoder 150 correctsa correctable error in the user data set SDQ included in the secondcodeword set SCW2 on a symbol basis based on the first syndrome and thesecond syndrome SDR_M. According to some aspects, the ECC decoder 150outputs a decoding status flag DSF indicating that a correctable erroris corrected. According to some aspects, the ECC decoder 150 outputs thedecoding status flag DSF when the ECC decoder 150 outputs corrected userdata set C_SDQ. According to some aspects, the ECC decoder 150 providesthe second syndrome SDR_M associated with the correctable error to theEMC 400 described with reference to FIG. 2 . In some embodiments, theECC decoder 150 provides error symbol information ESBI to the EMC 400described with reference to FIG. 2 .

FIG. 7 illustrates a parity generation matrix stored in memory of theECC engine of FIG. 6 according to at least one embodiment.

Referring to FIG. 7 , according to some aspects, the parity generationmatrix PGM includes a first parity sub matrix HS₁₁, a second parity submatrix HS₁₂, and a third parity sub matrix HS₁₃.

According to some aspects, the first parity sub matrix HS_(n) includes aplurality of offset sub matrices OSM1 to OSMk respectively correspondingto the plurality of data chips 200_1 to 200_k described with referenceto FIG. 1 , a first zero sub matrix ZSM1 corresponding to the firstparity chip 200 pa described with reference to FIG. 1 , and a secondzero sub matrix ZSM2 corresponding to the second parity chip 200 pbdescribed with reference to FIG. 1 . According to some aspects, eachoffset sub of the plurality of offset sub matrices OSM1 to OSMk, thefirst zero sub matrix ZSM1, and the second zero sub matrix ZSM2 includesp×p elements, where p is a natural number greater than one.

According to some aspects, each of the second parity sub matrix HS₁₂ andthe third parity sub matrix HS₁₃ includes (k+1) identity sub matricesISM and (k+1) zero sub matrices ZSM, where k is a natural number.According to some aspects, each of the (k+1) identity sub matrices ISMand the (k+1) zero sub matrices ZSM include p×p elements, where p is anatural number greater than one. According to some aspects, the (k+1)identity sub matrices ISMs and the (k+1) zero sub matrices ZSMs may bealternatingly arranged. In an example, in each of the second parity submatrix HS₁₂ and the third parity sub matrix HS₁₃, an identity sub matrixISM may be included between a proximate pair of zero sub matrices ZSM,and a zero sub matrix ZSM may be included between a proximate pair ofidentity sub matrices ISM.

FIG. 8 illustrates an example of a base offset sub matrix that is usedfor generating the offset sub matrices of the first parity sub matrix ofFIG. 7 according to at least one embodiment.

Referring to FIG. 8 , according to some aspects, a base offset submatrix OSMb includes (p+3) high-level elements, where p is a naturalnumber greater than one. According to some aspects, the base offset submatrix OSMb is obtained based on a primitive polynomial (for example,x¹⁶+x¹²+x³+x+1). In some embodiments, if a p-th order primitivepolynomial for the base offset sub matrix OSMb is varied, elements ofeach offset sub matrix of the plurality of offset sub matrices OSM1 toOSMk is varied.

According to some aspects, a first offset sub matrix OSM1 of theplurality of offset sub matrices OSM1 to OSMk is obtained based onexponentiation of the base offset sub matrix OSMb. According to someaspects, a second offset sub matrix OSM2 of the plurality of offset submatrices OSM1 to OSMk is obtained by multiplying the first offset submatrix OSM1 and a sub matrix obtained based on exponenation of the baseoffset sub matrix OSMb by an offset.

According to some aspects, a gap between two offset sub matrices OSM(2i−1) and OSM(2 i) (where i has integer values from one to eight)associated with a memory chip of the offset sub matrices OSM1 to OSMk isregular. In an example, an offset sub matrix OSM4 may be obtained bymultiplying an offset sub matrix OSM3 and a sub matrix obtained byexponentiation of the base offset sub matrix OSMb by an offset.

FIG. 9 illustrates an example of a zero sub matrix included in theparity generation matrix of FIG. 7 according to at least one embodiment.Referring to FIG. 9 , according to some aspects, each element (e.g.,value) of the zero sub matrix ZSM is a low-level element (e.g., a 0).

FIG. 10 illustrates an example of an identity sub matrix included in theparity generation matrix of FIG. 7 according to at least one embodiment.Referring to FIG. 10 , according to some aspects, the identity submatrix ISM includes p high-level elements disposed in a diagonaldirection. In an example, a first row and a first column of the identitysub matrix include a high-level element (e.g., a 1) in a first indexposition, a second row and a second column of the identity sub matrixinclude a high-level element in a second index position, and so on.According to some aspects, each index position of the identity submatrix ISM that does not include a high-level element includes alow-level element (e.g., a 0).

Referring to FIGS. 7 through 10 , according to some aspects, p is equalto 16, and corresponds to a number of bits included in the data setDQ_BL that are input to and/or output from each data chip of theplurality of data chips 200_1 to 200_k during one burst operation asdescribed with reference to FIG. 3 . According to some aspects, a numberof non-zero elements included in the first parity sub matrix HS₁₁ isgreater than a number of non-zero elements included in the second paritysub matrix HS₁₂ or a number of non-zero elements included in the thirdparity sub matrix HS₁₃.

FIG. 11 illustrates an example of the ECC encoder of the ECC engine ofFIG. 6 according to at least one embodiment.

Referring to FIG. 11 , according to some aspects, the ECC encoder 140includes an error locator parity generator 141, a first error magnitudeparity generator 143, a second error magnitude parity generator 145, anda buffer 147.

According to some aspects, the error locator parity generator 141performs an ECC encoding on the user data set SDQ and the meta data MDTby using the first parity sub matrix HS₁₁ to generate the first paritydata PRTL. According to some aspects, the first parity data PRTL is usedfor determining locations of errors. According to some aspects, theerror locator parity generator 141 provides the first parity data PRTLto the buffer 147. The first parity data PRTL may be referred to as afirst parity data.

According to some aspects, the error locator parity generator 141generates first parity data PRTL by performing a matrix-multiplicationoperation on the user data set SDQ and the meta data MDT using the firstparity sub matrix HS₁₁:

P _(L) =HS ₁₁[ms0]T  (1)

where ms is a vector representation of the user data set SDQ and themeta data MDT, p_(L) is a vector representation of the error locatorparity data PRTL, T is a matrix transpose, and O represents a p×p zeromatrix. According to some aspects, the zero matrix is a zero sub matrixZSM as described with reference to FIG. 9 .

According to some aspects, the first error magnitude parity generator143 performs an ECC encoding on the user data set SDQ and the meta dataMDT by using the second parity sub matrix HS₁₂ to generate the first subparity data PRTM1. According to some aspects, the first sub parity dataPRTM1 is used for determine a number of bit errors. According to someaspects, the first error magnitude parity generator 143 provides thefirst sub parity data PRTM1 to the buffer 147. The first sub parity dataPRTM1 may be referred to as first error magnitude parity data.

According to some aspects, the first error magnitude parity generator143 generates the first sub parity data PRTM1 by performing amatrix-multiplication operation on the user data set SDQ and the metadata MDT using the second parity sub matrix HS₁₂:

p _(M1) =HS ₁₂[msp _(L)0]^(T)  (2)

where p_(M1) is a vector representation of the first sub parity dataPRTM1.

According to some aspects, the second error magnitude parity generator145 performs an ECC encoding on the user data set SDQ and the meta dataMDT by using the third parity sub matrix HS₁₃ to generate the second subparity data PRTM2. According to some aspects, the second sub parity dataPRTM2 is used for determining a number of bit errors. According to someaspects, the second error magnitude parity generator 145 provides thesecond error magnitude parity data PRTM2 to the buffer 147. The secondsub parity data PRTM2 may be referred to as second error magnitudeparity data.

According to some aspects, the second error magnitude parity generator145 generates the second sub parity data PRTM2 by performing amatrix-multiplication operation on the user data set SDQ and the metadata MDT using the third parity sub matrix HS₁₃:

p _(M2) =HS ₃[msp _(L)0]^(T)  (3)

where p_(M2) is a vector representation of the second error magnitudeparity data PRTM2.

According to some aspects, the first sub parity data PRTM1 and thesecond sub parity data PRTM2 are included in the second parity dataPRTM.

According to some aspects, the buffer 147 receives the user data setSDQ, the meta data MDT, the first parity data PRTL, the first sub paritydata PRTM1, and the second sub parity data PRTM2 as the first codewordset SCW1, and provides the first codeword set SCW1 including the userdata set SDQ, the meta data MDT, the first parity data PRTL, the firstsub parity data PRTM1, and the second sub parity data PRTM2 to thememory module MM.

FIG. 12 illustrates an example of a parity check matrix stored in thememory of the ECC engine of FIG. 6 according to at least one embodiment.Referring to FIG. 12 , according to some aspects, the parity checkmatrix PCM includes a fourth parity sub matrix HS₂₁, a fifth parity submatrix HS₂₂, and a sixth parity sub matrix HS₂₃.

According to some aspects, the fourth parity sub matrix HS₂₁ includesthe plurality of offset sub matrices OSM1 to OSMk corresponding to thedata chips 200_1 to 200_k described with reference to FIG. 7 , the firstzero sub matrix ZSM1 corresponding to the first parity chip 200 padescribed with reference to FIG. 7 , and the second zero sub matrix ZSM2corresponding to the second parity chip 200 pb described with referenceto FIG. 7 . According to some aspects, the each offset sub matrix of theplurality of offset sub matrices OSM1 to OSMk, the first zero sub matrixZSM1, and the second zero sub matrix ZSM2 includes p×p elements.

According to some aspects, each of the fifth parity sub matrix HS₂₂ andthe sixth parity sub matrix HS₂₃ includes (k+1) identity sub matricesISM and (k+1) zero sub matrices ZSM. According to some aspects, each ofthe (k+1) identity sub matrices ISM and the (k+1) zero sub matrices ZSMincludes p×p elements. According to some aspects, the (k+1) identity submatrices ISM and the (k+1) zero sub matrices ZSM are alternatinglyarranged. In an example, in each of the fifth parity sub matrix HS₂₁ andthe sixth parity sub matrix HS₃₁, an identity sub matrix ISM may beincluded between a proximate pair of zero sub matrices ZSM, and a zerosub matrix ZSM may be included between a proximate pair of identity submatrices ISM.

Referring to FIGS. 7 and 12 , according to some aspects, the fourthparity sub matrix HS₂₁ is similar to the first parity sub matrix HS₁₁,the fifth parity sub matrix HS₂₂ is similar to the second parity submatrix HS₁₂, and the sixth parity sub matrix HS₂₃ is similar to thethird sub matrix HS₁₃. According to some aspects, the ECC encoder 140and the ECC decoder 150 described with reference to FIG. 6 share theparity generation matrix PGM and perform ECC encoding and ECC decoding,respectively. According to some aspects, the parity check matrix PCM isequivalent to the parity generation matrix PGM described with referenceto FIGS. 6 and 7 .

FIG. 13 illustrates an example of an offset sub matrix OSM of FIG. 12according to at least one embodiment. Referring to FIG. 13 , accordingto some aspects, the offset sub matrix OSM is obtained based onexponentiation of the base offset sub matrix OSMb by an offset ofs.

Referring to FIGS. 12 and 13 , according to some aspects, a number ofnon-zero elements included in the third parity sub matrix HS₂₁ may begreater than a number of non-zero elements included in the fourth paritysub matrix HS₂₂ or a number of non-zero elements included in the sixthparity sub matrix HS₂₃. Therefore, in some embodiments, the ECC decoder150 described with reference to FIG. 6 generates a first sub syndromeand a second sub syndrome using the fifth parity sub matrix HS₂₂ and thesixth parity sub matrix HS₂₃ and generates the second syndrome bysumming the first sub syndrome and the second sub syndrome.

FIG. 14 illustrates an example of the ECC decoder included in the ECCengine of FIG. 6 according to at least one embodiment.

Referring to FIG. 14 , according to some aspects, the ECC decoder 150includes a first error magnitude syndrome generator 151, a second errormagnitude syndrome generator 152, an error locator syndrome generator153, a data corrector 155, and a decoding status flag (DSF) generator156.

According to some aspects, the first error magnitude syndrome generator151 generates a first sub syndrome SDR_M1 indicating a number of errorbits by performing a matrix-multiplication operation on the readcodeword set SCW2 and the second parity sub matrix HS₂₂:

S _(M01) =HS ₂₂ r ^(T)  (4)

where r^(T) is the read codeword set SCW2 and S_(M01) is a vectorrepresentation of the first sub syndrome SDR_M1.

According to some aspects, the second error magnitude syndrome generator152 generates a second sub syndrome SDR_M2 indicating a number of errorbits by performing a matrix-multiplication operation on the readcodeword set SCW2 and the third parity sub matrix HS₂₃.

S _(M02) =HS ₂₃ r ^(T)  (5)

where S_(M02) is a vector representation of the second sub syndromeSDR_M2.

According to some aspects, the first sub syndrome SDR_M1 and the secondsub syndrome SDR_M2 are included in a second syndrome SDR_M, e.g., anerror magnitude syndrome.

According to some aspects, the error locator syndrome generator 153generates a first syndrome SDR_L indicating positions of correctableerrors in the second codeword set (e.g., the read codeword set) SCW2:

S _(L) =HS ₂₁ r ^(T)  (5)

where S_(L) is a vector representation of the first syndrome SDR_L.

According to some aspects, the error locator syndrome generator 153provides the first syndrome SDR_L to the data corrector 155.

According to some aspects, the data corrector 155 corrects a correctableerror bit in the user data set SDQ of the read codeword set SCW2 on asymbol basis based on the first syndrome SDR_L and the second syndromeSDR_M to output the corrected user data set C_SDQ or the user data setSDQ when the user data set SDQ includes an uncorrectable error.According to some aspects, the data corrector 155 outputs an error flagEF to the decoding status flag generator 156. According to some aspects,the error flag EF indicates whether an error bit in the user data setSDQ are corrected.

According to some aspects, the data corrector 155 provides the secondsyndrome SDR_M and the error symbol information ESBI associated with thecorrectable errors to the EMC 400 described with reference to FIG. 2when the first syndrome SDR_L and the second syndrome SDR_M indicatesthat the user data set in the codeword set SCW2 includes the correctableerror.

According to some aspects, the decoding status flag generator 156generates the decoding status flag DSF indicating whether the user dataset SDQ in the second codeword set SCW2 includes the correctable erroror the uncorrectable error based on the first second syndrome SDR_L, thesecond syndrome SDR_M, and the error flag EF.

According to some aspects, a first syndrome SDR_L having zero value anda second syndrome SDR_M having zero value indicate that the user dataset SDQ in the second codeword sett SCW2 includes no errors. Accordingto some aspects, a first syndrome SDR_L having a non-zero value and asecond syndrome SDR_M having a non-zero value indicate that the userdata set SDQ in the second codeword SCW2 includes a correctable error ona symbol basis.

According to some aspects, a first syndrome SDR_L having zero value anda second syndrome SDR_M having a non-zero value indicate that the userdata set SDQ in the second codeword SCW2 includes an uncorrectable errorthat cannot be corrected using the first syndrome SDR_L and the secondsyndrome SDR_M.

According to some aspects, when the user data set SDQ in the secondcodeword SCW2 includes a correctable error on a symbol basis, detectedthrough a read operation, the EMC 400 stores the second syndrome.According to some aspects, the EMC 400 accumulates a plurality of secondsyndromes associated with a plurality of correctable errors. Accordingto some aspects, the EMC 400 stores the plurality of second syndromes.According to some aspects, the EMC 400 determines an attribute of thecorrectable errors based on a result of counting second syndromes of theplurality of second syndromes. According to some aspects, the EMC 400predicts an occurrence of an uncorrectable error in a memory region inwhich a correctable error occurs based on the plurality of secondsyndromes.

FIG. 15 is a block diagram illustrating an example of the error managingcircuit of the memory controller of FIG. 2 according to at least oneembodiment.

Referring to FIG. 15 , an error managing circuit (EMC) 400 a may includea syndrome register 450 (e.g., a SR_M register), a syndrome accumulationregister 460 (e.g., a SDR_M accumulation register), a risky errordeterminer 470, an alert signal generator 475, a repair signal generator480, and a risky error pattern register 490. According to some aspects,EMC 400 a is an example of, or includes aspects of, the EMC 400described with reference to FIG. 1 .

According to some aspects, the syndrome register 450 stores a secondsyndrome SDR_M associated with a correctable error and obtained througha read operation as syndrome information SDRI. According to someaspects, the syndrome register 450 provides the syndrome informationSDRI to the syndrome accumulation register 460.

According to some aspects, the syndrome accumulation register 460 isconnected to the syndrome register 450. According to some aspects, thesyndrome accumulation register 460 receives the syndrome informationSDRI from the syndrome register 450 and stores the second syndrome SDR_Mincluded in the syndrome information SDRI. According to some aspects,the syndrome accumulation register 460 accumulates a plurality of secondsyndromes SDR_M_ACM by repeatedly receiving syndrome information SDRIincluding second syndromes SDR_M of the plurality of second syndromesSDR_M_ACM from the syndrome register 450 and storing the secondsyndromes SDR_M as the plurality of second syndromes SDR_M_ACM.According to some aspects, the syndrome accumulation register outputsthe plurality of second syndromes SDR_M_ACM.

According to some aspects, the risky error pattern register 490 storesat least one of a first error pattern set REP1 and a second errorpattern set REP2 and provides the risky error determiner 470 with atleast one of the first error pattern set REP1 and the second errorpattern set REP2.

According to some aspects, the risky error determiner 470 is connectedto the syndrome accumulation register 460. According to some aspects,the risky error determiner 470 compares a pattern included in theplurality of second syndromes SDR_M_ACM with at least one of the firsterror pattern set REP1 and the second error pattern set REP2. Accordingto some aspects, the risky error determiner 470 generates risky errorinformation REI predicting an occurrence of an uncorrectable error basedon a result of the comparison. According to some aspects, the riskyerror determiner 470 provides the risky error information REI to thealert signal generator 475.

According to some aspects, the risky error determiner 470, determinesthat a result of the comparison is that a pattern of the plurality ofsecond syndromes SDR_M_ACM matches at least one of the first errorpattern set REP1 and the second error pattern set REP2. According tosome aspects, the risky error determiner 470 predicts a probability ofthe occurrence of the uncorrectable error is greater than a referenceprobability in response to the determination and provides the riskyerror information REI indicating that the probability of the occurrenceof the uncorrectable error is greater than the reference probability tothe alert signal generator 475 and the repair signal generator 480.

In some embodiments, the first error pattern set REP1 is associated withinput/output pads through which user data is input and output in theplurality of data chips 200_1 to 200_k described with reference to FIG.1 . In some embodiments, the second error pattern set REP2 is associatedwith a burst length of the user data as described with reference to FIG.3 .

According to some aspects, the first error pattern set REP1 includesfirst error patterns associated with the input/output pads and a firstrule. According to some aspects, the second error pattern set REP2includes second error patterns associated with the burst length and asecond rule. According to some aspects, each of the first error patternset REP1 and the second error pattern REP2 include data corresponding toa high probability of an occurrence of an uncorrectable error. Accordingto some aspects, each of the first error pattern set REP1 and the seconderror pattern REP2 include a plurality of error patterns.

According to some aspects, in response to a determination that thepattern of the plurality of second syndromes SDR_M_ACM matches the firsterror pattern set REP1, the EMC 400 a determines that an error occursdue to a fault of the input/output pads through which user data is inputand output. According to some aspects, in response to a determinationthat the pattern of the plurality of second syndromes SDR_M_ACM matchesthe second error pattern set REP2, the EMC 400 a determines that anerror occurs due to a fault of sub word-line drivers disposed in subarray blocks included in the memory cell array 300 described withreference to FIG. 4 .

According to some aspects, the alert signal generator 475 provides thealert signal ALRT indicating that the uncorrectable error occurs in thememory region based on the risky error information REI to a CPU 110 asdescribed with reference to FIG. 2 . According to some aspects, therepair signal generator 480 is connected to the syndrome accumulationregister 460 and provides a first repair signal RPR1 for repairing thememory region based on the plurality of second syndromes SDR_M_ACM andthe alert signal ALRT to the CPU 110.

Accordingly, in some embodiments, in response to the pattern of theplurality of second syndromes SDR_M_ACM corresponding to a risky errorpattern that matches at least one of the first error pattern set REP1and the second error pattern set REP2, the EMC 400 a predicts that theprobability of the occurrence of the uncorrectable error is greater thana reference probability and provides the alert signal ALRT associatedwith the risky error pattern to the CPU 110 in response to theprediction.

According to some aspects, the CPU 110 performs a post package repair onthe memory region in which the uncorrectable error occurs based on thealert signal ALRT and the first repair signal RPR1. According to someaspects, the CPU 110 inhibits a use of the memory region in which theuncorrectable error occurs based on the alert signal ALRT and the firstrepair signal RPR1.

According to some aspects, the EMC 400 a stores the second syndromeSDR_M associated with the correctable error and obtained through a readoperation, accumulates the second syndromes SDR_M associated with thecorrectable errors and obtained through the plurality of read operationsas the plurality of second syndromes SDR_M_ACM by storing the secondsyndromes SDR_M, generates the risky error information REI predictingthe occurrence of the uncorrectable error based on comparing theplurality of second syndromes SDR_M_ACM with at least one error patternset (e.g., the first error pattern set REP1 or the second error patternset REP2), provides the alert signal ALRT to the CPU 110 based on therisk error information REI, and provides the first repair signal RPR1for repairing the memory region based on the plurality of secondsyndromes SDR_M_ACM and the alert signal ALRT to the CPU 110.

FIG. 16 illustrates an example of the syndrome register of the errormanaging circuit of FIG. 15 according to at least one embodiment.Syndrome register 450 a is an example of, or includes aspects of, thesyndrome register 450 described with reference to FIG. 15 .

Referring to FIG. 16 , according to some aspects, a syndrome register450 a temporarily stores a first sub syndrome SDR_M1 and a second subsyndrome SDR_M2 associated with a correctable error detected through aread operation. According to some aspects, the correctable error isdetected during the read operation. According to some aspects, thesyndrome register 450 a stores the first sub syndrome SDR_M1 and thesecond sub syndrome SDR_M2 associated with correctable errors detectedthrough each of a plurality of current read operations.

According to some aspects, the data corrector 155 of the ECC decoder 150described with reference to FIG. 14 stores a second syndrome SDR_M inthe EMC 400 described with reference to FIG. 1 when the correctableerror that is correctable on a symbol basis occurs in the user data setSDQ. According to some aspects, the first sub syndrome SDR_M1 and thesecond sub syndrome SDR_M2 stored in the syndrome register 450 a eachrepresent a symbols included in the user data set SDQ. According to someaspects, the first sub syndrome SDR_M1 and the second sub syndromeSDR_M2 are arranged along a data input/output (I/O) pad direction DQPand a burst length direction BL in the syndrome register 450 a.According to some aspects, the burst length direction BL is orthogonalto the direct input/output pad direction DQP.

FIG. 17 illustrates an example of the syndrome accumulation register ofthe EMC of FIG. 15 according to at least one embodiment. Syndromeaccumulation register 460 a is an example of, or includes aspects of,the syndrome accumulation register 460 described with reference to FIG.15 .

Referring to FIG. 17 , according to some aspects, a syndromeaccumulation register 460 a accumulates second syndromes associated withcorrectable errors and obtained through a plurality of read operationsto obtain a plurality of second syndromes SDR_M_ACM. According to someaspects, the syndrome accumulation register 460 a stores the pluralityof second syndromes SDR_M_ACM therein. In an example, the syndromeaccumulation register 460 a stores the second syndromes by arranging thesecond syndromes along the data I/O pad DQP direction and the burstlength BL direction in memory of the syndrome accumulation register 460a and accumulates the stored second syndromes as the plurality of secondsyndromes SDR_M_ACM.

According to some aspects, the risky error determiner 470 determines apossibility of an occurrence of an uncorrectable error by comparing apattern of the plurality of second syndromes SDR_M_ACM in the data I/Opad DQP direction with the first error pattern set REP1 and by comparinga pattern of the plurality of second syndromes SDR_M_ACM in the burstlength BL direction with the second error pattern set REP2.

In an example illustrated by FIG. 17 , a pattern ASDP1 in the data I/Opad DQP direction corresponds to ‘0101’ and a pattern ASDP2 in the burstlength BL direction corresponds to ‘01100100’. In the example,correctable errors occur repeatedly in a specific burst length BLdirection based on the pattern ASDP2 corresponding to ‘01100100’.Accordingly, in the example, the correctable errors are associated witha sub word-line driver.

According to some aspects, the first error pattern set REP1 correspondsto a high probability of the occurrence of the uncorrectable error andincludes a plurality of first error patterns in the data I/O pad DQPdirection. According to some aspects, the second error pattern set REP2corresponds to a high probability of the occurrence of the uncorrectableerror and includes a plurality of second error patterns in the burstlength BL direction.

FIG. 18 is a block diagram of an example of an error managing circuitincluded in the memory controller of FIG. 2 according to at least oneembodiment.

Referring to FIG. 18 , according to some aspects, an error managingcircuit (EMC) 400 b includes an error counting circuit 405 and an errormanager 430. EMC 400 b is an example of, or includes aspects of, the EMC400 described with reference to FIG. 1 .

According to some aspects, the error counting circuit 405 counts theerror addresses EADDR based on the error symbol information ESBIindicating a symbol in which the correctable error occurs. According tosome aspects, the error counting circuit 405 outputs a counted value CVbased on the counting.

According to some aspects, the error manager 430 receives the countedvalue CV and the plurality of second syndromes SDR_M_ACM. According tosome aspects, the error manager 430 determines a first attribute (e.g.,an attribute corresponding to a physical location in which thecorrectable error occurs) of the correctable error based on the countedvalue CV. According to some aspects, the error manager 430 generates asecond repair signal RPR2 for repairing the memory region based on thefirst attribute and the plurality of second syndromes SDR_M_ACM.According to some aspects, the error manager 430 predicts the occurrenceof the uncorrectable error in the memory region based on the pluralityof accumulated second syndromes SDR_M_ACM. According to some aspects,the error manager 430 provides an alert signal ALRT to the CPU 110described with reference to FIG. 1 based on the prediction. According tosome aspects, the error manager 430 provides the second repair signalRPR2 to the CPU 110, and the CPU 110 provides an address to be repairedand a command designating a repair operation to the memory module MMdescribed with reference to FIG. 1 in response to the second repairsignal RPR2.

FIG. 19 is a block diagram of an example of an error counting circuitincluded in the error managing circuit of FIG. 18 according to at leastone embodiment.

Referring to FIG. 19 , according to some aspects, the error countingcircuit 405 includes an error address register 410, an addresscomparator 415, and a counter circuit 420.

According to some aspects, the error address register 410 stores theerror addresses EADDR and the error symbol information ESBI. Accordingto some aspects, the address comparator 415 is connected to the erroraddress register 410. According to some aspects, the address comparator415 compares a previous error address P_EADDR including error symbolinformation associated with a previous read operation among theplurality of read operations and a current error address C_EADDRincluding error symbol information associated with a current readoperation and outputs an address comparison signal ACS indicating aresult of the comparison.

According to some aspects, the counter circuit 420 receives the addresscomparison signal ACS and outputs the counted value CV based on aplurality of bits included in the address comparison signal ACS.According to some aspects, the counter circuit 420 includes a firstcounter (e.g., a row counter) 421, a second counter (e.g., a columncounter) 423, a third counter (e.g., a bank counter) 425, and a fourthcounter (e.g., a chip counter) 427.

According to some aspects, the first counter 421 outputs a first subcounted value R_CNT associated with a row address of the memory regionbased on the address comparison signal ACS. According to some aspects,the second counter 423 outputs a second sub counted value C_CNTassociated with a column address of the memory region based on theaddress comparison signal ACS. According to some aspects, the thirdcounter 425 outputs a third sub counted value BN_CNT associated with abank address of the memory region based on the address comparison signalACS. According to some aspects, the fourth counter 427 outputs a fourthsub counted value CH_CNT associated with a memory chip including thememory region based on the address comparison signal ACS.

According to some aspects, the counted value CV includes the first subcounted value R_CNT, the second sub counted value C_CNT, the third subcounted value BN_CNT, and the fourth sub counted value CH_CNT. Accordingto some aspects, the error manager 430 determines a physical attributeof the memory region based on a change of each of the first sub countedvalue R_CNT, the second sub counted value C_CNT, the third sub countedvalue BN_CNT, and the fourth sub counted value CH_CNT.

FIG. 20 illustrates an example of the counted value of FIG. 19 accordingto at least one embodiment.

In the example illustrated by FIG. 20 , two correctable errors aredetected in the user data set SDQ through two read operations performedon the codeword set SCW in FIG. 3 , and row addresses are different inthe error address EADDR associated with the two correctable errors. Asthe row addresses are different in the error address EADDR associatedwith the two correctable errors, the first sub counted value R_CNT isincremented by one.

FIG. 21 illustrates an example of the error address register of FIG. 19according to at least one embodiment.

Referring to FIG. 21 , according to some aspects, the error addressregister 410 is configured as a table. In an example illustrated by FIG.21 , indices Idx11 and Idx12 store error address information EAIassociated with the correctable errors and the error symbol informationESBI.

In the example, the error address register 410 includes a first column411 and a second column 413. The first column 411 stores bankaddress/row address/column addresses BA/RA/CA_11 and BA/RA/CA_12 of thememory region in which the correctable errors occur as the error addressinformation EAI. The second column 413 stores a chip identifier CID1 ofa data chip including the memory region in which the correctable errorsoccur as the error symbol information ESBI.

According to some aspects, the error address information EAI and theerror symbol information ESBI stored in the first index Idx11 isprovided to the address comparator 415 as the previous error addressP_EADDR, and the error address information EAI and the error symbolinformation ESBI stored in the second index Idx12 is provided to theaddress comparator 415 as the current error address C_EADDR,

FIG. 22 is a block diagram of an example of an error manager included inthe error managing circuit of FIG. 18 according to at least oneembodiment.

Referring to FIG. 22 , according to some aspects, the error manager 430includes a fault attribute predictor 440, a syndrome register (e.g., aSDR_M register) 450, a syndrome accumulation register (e.g., a SDR_Maccumulation register) 460, a risky error determiner 470, an alertsignal generator 475, a repair signal generator 480 a, and a risky errorpattern register 490.

According to some aspects, the fault attribute predictor 440 determinesthe first attribute of the correctable errors based on the counted valueCV and generates a fault attribute signal FAS indicating the firstattribute based on the determination. According to some aspects, thesyndrome register 450 stores the second syndrome SDR_M associated withthe correctable error and obtained through a read operation.

According to some aspects, the syndrome accumulation register 460 isconnected to the syndrome register 450 and stores second syndromes SDR_Massociated with correctable errors obtained through a plurality of readoperations by accumulating the second syndromes SDR_M to obtain aplurality of second syndromes SDR_M_ACM (e.g., an accumulated secondsyndrome SDR_M_ACM).

According to some aspects, the risky error pattern register 490 storesat least error pattern set including a first error pattern set REP1 anda second error pattern set REP2 and provides the risky error determiner470 with the at least error pattern set including the first errorpattern set REP1 and the second error pattern set REP2.

According to some aspects, the risky error determiner 470 is connectedto the syndrome accumulation register 460 and compares a pattern of theaccumulated second syndrome SDR_M_ACM with the at least one errorpattern set, generates risky error information REI predicting occurrenceof the uncorrectable error based on a result of the comparison, andprovides the risky error information REI to the alert signal generator475. According to some aspects, in response to a pattern of theaccumulated second syndrome SDR_M_ACM matching at least one of the firsterror pattern set REP1 and the second error pattern set REP2, the riskyerror determiner 470 predicts a that a probability of the occurrence ofthe uncorrectable error is greater than a reference probability andprovides the risky error information REI indicating that the probabilityof the occurrence of the uncorrectable error is greater than thereference probability to the alert signal generator 475 and the repairsignal generator 480 a.

According to some aspects, the alert signal generator 475 provides thealert signal ALRT indicating that the uncorrectable error occurs in thememory region based on the risky error information REI to the CPU 110described with reference to FIG. 1 with. According to some aspects, therepair signal generator 480 a is connected to the fault attributepredictor 440 and to the syndrome accumulation register 460 and providesa repair signal RPR2 for repairing the memory region based on the faultattribute signal FAS and the accumulated second syndrome SDR_M_ACM tothe CPU 110.

FIG. 23 is a flow chart illustrating a process for operating a memorysystem according to at least one embodiment.

Referring to FIGS. 1-17 and 23 , a process for operating a memory system20 including a memory module MM including a plurality of data chips, afirst parity chip, a second parity chip, and a memory controller 100that controls the memory module MM is provided. In operation S210, anECC encoder 140 of an ECC engine 130 included in the memory controller100 performs an ECC encoding on a user data set SDQ and a meta data MDTbased on a parity generation matrix PGM to generate a parity data setSPRT including a first parity data PRTL and a second parity data PRTM.

In operation S220, the memory controller 100 stores a codeword set SCW1including the user data set SDQ, the meta data MDT, and the parity dataset SPRT in the plurality of data chips 200_1 to 200_k, the first paritychip 200 pa, and the second parity chip 200 pb.

In operation S230, the memory controller 100 reads a codeword set SW2including the user data set SDQ, the meta data MDT, and the parity dataset SPRT from the memory module MM.

In operation S240, an ECC decoder 150 of the ECC engine 130 generates afirst syndrome SDR_L and a second syndrome SDR_M associated withcorrectable errors based on the read codeword set SCW2 and the paritycheck matrix PCM.

In operation S250, the ECC decoder 150 stores the second syndrome SDR_Min an error managing circuit (EMC) 400 while correcting the correctableerrors on a symbol basis based on the first syndrome SDR_L and thesecond syndrome SDR_M. In some embodiments, the EMC 400 stores secondsyndromes SDR_M associated with correctable errors obtained through aplurality of read operations by accumulating the second syndromes as anaccumulated second syndrome (e.g., a plurality of second syndromes)SDR_M_ACM, predicts an occurrence of an uncorrectable error based on theaccumulated second syndrome SDR_M_ACM, and generates a repair signalRPR1 for repairing a memory region associated with the correctableerrors, and provides the repair signal RPR1 to the CPU 110.

In operation S260, the CPU 110 repairs a memory region in which theuncorrectable error occurs while notifying an occurrence of theuncorrectable error based on the accumulated second syndrome SDR_M_ACM.

Therefore, according to the process, the EMC 400 counts error addressesassociated with correctable errors, stores second syndromes associatedwith the correctable errors by accumulating the second syndromes as aplurality of second syndromes, predicts an occurrence of anuncorrectable error in at least one memory region associated with thecorrectable errors of the plurality of data chips based on the pluralityof second syndromes (e.g., the accumulated second syndrome), anddetermines an error management policy for the at least one memoryregion.

FIG. 24 is a block diagram of a memory module that may be employed bythe memory system of FIG. 1 according to at least one embodiment. Thememory module 500 is an example of, or includes aspects of, the memorymodule MM described with reference to FIG. 1 .

Referring to FIG. 24 , according to some aspects, a memory module 500includes a registered clock driver (RCD) 590 disposed in or mounted on acircuit board 501, a plurality of semiconductor memory devices 601 a to601 e, 602 a to 602 e, 603 a to 603 d, and 604 a to 604 d, moduleresistance units 560 and 570, a serial present detect (SPD) chip 580,and a power management integrated circuit (PMIC) 585. The RCD 590 may bereferred to as a buffer chip 590.

According to some aspects, the buffer chip 590 controls thesemiconductor memory devices 601 a to 601 e, 602 a to 602 e, 603 a to603 d, and 604 a to 604 d, and the PMIC 585 under control of the memorycontroller 100 described with reference to FIG. 1 . In an example, thebuffer chip 590 receives an address ADDR, a command CMD, a user data setSDQ, and meta data MDT from the memory controller 100.

According to some aspects, the SPD chip 580 is a programmable read onlymemory (PROM) (e.g., an electrically erasable PROM (EEPROM)). Accordingto some aspects, the SPD chip 580 includes initial information and/ordevice information DI of the memory module 500. In some embodiments, theSPD chip 580 includes initial information and/or device information DIsuch as a module form, a module configuration, a storage capacity, amodule type, an execution environment, and the like of the memory module500.

According to some aspects, when a memory system including the memorymodule 500 is booted up, the memory controller 100 reads the deviceinformation DI from the SPD chip 580 and recognizes the memory module500 based on the device information DI. According to some aspects, thememory controller 100 controls the memory module 500 based on the deviceinformation DI from the SPD chip 580. In an example, the memorycontroller 100 recognizes a type of the semiconductor memory devicesincluded in the memory module 500 based on the device information DIfrom the SPD chip 580.

As illustrated in the example of FIG. 24 , the circuit board 501 is aprinted circuit board that extends in a second direction D2perpendicular to a first direction D1 between a first edge portion 503and a second edge portion 505. The first edge portion 503 and the secondedge portion 505 extend in the first direction D1.

According to some aspects, the buffer chip 590 is disposed on a centerof the circuit board 501. According to some aspects, the plurality ofsemiconductor memory devices 601 a to 601 e, 602 a to 602 e, 603 a to603 d, and 604 a to 604 d are arranged in a plurality of rows betweenthe buffer chip 590 and the first edge portion 503, and between thebuffer chip 590 and the second edge portion 505. In some embodiments,operations described herein as being performed by the buffer chip 590are performed by processing circuitry.

According to some aspects, the semiconductor memory devices 601 a to 601e and 602 a to 602 e are arranged along rows between the buffer chip 590and the first edge portion 503, the semiconductor memory devices 603 ato 603 d and 604 a to 604 d are arranged along rows between the bufferchip 590 and the second edge portion 505, the semiconductor memorydevices 601 a to 601 d, 602 a to 602 d, 603 a to 603 d, and 604 a to 604d are referred to as data chips, and the semiconductor memory devices601 e and 602 e are referred to as first and second parity chips,respectively.

According to some aspects, the buffer chip 590 generates first paritydata and second parity data based on the user data set SDQ and the metadata MDT, stores the user data set SDQ and the meta data MDT in a datachip, stores the first parity data in the first parity chip, and storethe second parity data in the second parity chip.

According to some aspects, the buffer chip 590 provides a firstcommand/address signal to the semiconductor memory devices 601 a to 601e through a first command/address transmission line 561 and provides asecond command/address signal to the semiconductor memory devices 602 ato 602 e through a second command/address transmission line 563.According to some aspects, the buffer chip 590 provides a thirdcommand/address signal to the semiconductor memory devices 603 a to 603d through a third command/address transmission line 571 and provides afourth command/address signal to the semiconductor memory devices 604 ato 604 d through a fourth command/address transmission line 573.

According to some aspects, the first and second command/addresstransmission lines 561 and 563 are connected in common to a first moduleresistance unit 560 disposed adjacent to the first edge portion 503, andthe third and fourth command/address transmission lines 571 and 573 areconnected in common to a second module resistance unit 570 disposedadjacent to the second edge portion 505. According to some aspects, eachof the module resistance units 560 and 570 include a terminationresistor Rtt/2 connected to a termination voltage Vtt.

According to some aspects, each of the semiconductor memory devices 601a to 601 e, 602 a to 602 e, 603 a to 603 d, and 604 a to 604 d is a DRAMdevice.

According to some aspects, the SPD chip 580 is disposed adjacent to thebuffer chip 590 and the PMIC 585 is disposed between the semiconductormemory device 603 d and the second edge portion 505. According to someaspects, the PMIC 585 generates a power supply voltage VDD based on aninput voltage VIN and provides the power supply voltage VDD to thesemiconductor memory devices 601 a to 601 e, 602 a to 602 e, 603 a to603 d, and 604 a to 604 d.

FIG. 25 is a block diagram of an example of the buffer chip included inthe memory module of FIG. 24 according to at least one embodiment.

Referring to FIG. 25 , according to some aspects, the buffer chip 590includes a memory management unit (MMU) 610, an ECC engine 630, and anerror managing circuit (EMC) 700. The EMC 700 is an example of, orincludes aspects of, the EMC 400 described with reference to FIG. 1 .

According to some aspects, the MMU 610 repeats the command CMD and theaddress ADDR from the memory controller 100 to the semiconductor memorydevices 601 a to 601 e, 602 a to 602 e, 603 a to 603 d, and 604 a to 604d. According to some aspects, the MMU 610 includes a control unit 611, acommand buffer (CMF BUF) 613, and an address buffer (ADDR BUF) 615.According to some aspects, the control unit 611 controls the commandbuffer 613 and the address buffer 615 to control buffering timing of thecommand CMD and the address ADDR. According to some aspects, the addressbuffer 615 provides an address associated with correctable errors as anerror address EADDR to the EMC 700 under control of the control unit611.

According to some aspects, the ECC engine 630 includes an ECC encoder640, an ECC decoder 650, and a memory 680. According to some aspects,the ECC encoder 640 performs an ECC encoding on the user data set SDQand the meta data MDT using a parity generation matrix to generate acodeword set SCW11 including the data set SDQ, the meta data MDT, afirst parity data PRTL and a second parity data PRTM in a writeoperation.

According to some aspects, the ECC decoder 650 performs an ECC decodingon a codeword set SCW12 including the user data set SDQ, the meta dataMDT, the first parity data PRTL, and the second parity data PRTM using aparity check matrix to generate a first syndrome and a second syndrome.According to some aspects, the ECC decoder 650 corrects a correctableerror in the user data set SDQ included in the codeword set SCW12 on asymbol basis based on the first syndrome and the second syndrome andprovides a corrected user data set to the memory controller 100.According to some aspects, the ECC decoder 650 provides a secondsyndrome SDR_M associated with the correctable errors to the EMC 700.According to some aspects, the ECC decoder 650 provides error symbolinformation SBI associated with a symbol in which the correctable erroroccurs to the EMC 700.

According to some aspects, the memory 680 stores the parity generationmatrix and the parity check matrix. According to some aspects, the ECCengine 630 is implemented as the ECC engine 130 of FIG. 6 .

According to some aspects, the EMC 700 stores second syndromes SDR_Massociated with the plurality of correctable errors and obtained througha plurality of read operations on the memory module 500 and accumulatesthe second syndromes SDR_M as a plurality of second syndromes. Accordingto some aspects, the EMC 700 predicts an occurrence of an uncorrectableerror in at least one memory region of the plurality of data chipsassociated with the correctable errors based on the plurality of secondsyndromes, and determines an error management policy for the at leastone memory region. According to some aspects, the EMC 700 provides analert signal ALRT notifying a possibility of occurrence of uncorrectableerrors based on the prediction to the MMU 610. According to someaspects, the EMC 700 generates a repair signal RPR for repairing the atleast one memory region.

FIG. 26 is a block diagram illustrating a memory system having quad-rankmemory modules according to at least one embodiment.

Referring to FIG. 26 , a memory system 800 includes a memory controller810 and memory modules 820 and 830. The memory system 800 is an exampleof, or includes aspects of, the memory system 20 described withreference to FIG. 1 . Two memory modules are depicted in FIG. 26 . Insome embodiments, memory system 800 includes fewer than or more than twomemory modules.

According to some aspects, the memory controller 810 controls at leastone of the memory modules 820 and 830 in response to a command receivedfrom a processor and/or host. According to some aspects, the memorycontroller 810 is implemented using processing circuitry (e.g., aprocessor). According to some aspects, the memory controller 810 isimplemented with a host, an application processor, or a system-on-a-chip(SoC).

According to some aspects, a source termination is implemented with aresistor RTT on a bus 840 of the memory controller 810 to promote signalintegrity. According to some aspects, the resistor RTT is coupled to apower supply voltage VDDQ. According to some aspects, the memorycontroller 810 includes a transmitter 811 that transmits a signal to atleast one of the memory modules 820 and 830. According to some aspects,the memory controller 810 includes a receiver 813 that receives a signalfrom at least one of the memory modules 820 and 830.

According to some aspects, the memory controller 810 includes an ECCengine 815 and an error managing circuit (EMC) 817. According to someaspects, the ECC engine 130 described with reference to FIG. 6 isimplemented as the ECC engine 815 and the EMC 400 described withreference to FIG. 15 is implemented as the EMC 817.

Accordingly, in some embodiments, the ECC engine 815 includes an ECCencoder and an ECC decoder, and the ECC decoder performs an ECC decodingon a read codeword from at least one of the memory modules 820 and 830to generate a first syndrome and a second syndrome and provides thesecond syndrome associated with the correctable error to the EMC 817.

According to some aspects, the EMC 817 predicts an occurrence of anuncorrectable error in a memory region associated with the correctableerrors based on accumulating the second syndromes and determines anerror management policy for the memory region. Therefore, in someembodiments, the EMC 817 mitigates an occurrence of the uncorrectableerror due to accumulated correctable errors in at least one of thememory modules 820 and 830. Accordingly, in some embodiments, the memorysystem 800 efficiently corrects and manages errors.

The memory modules 820 and 830 may be referred to as a first memorymodule 820 and a second memory module 830. According to some aspects,the first memory module 820 and the second memory module 830 are coupledto the memory controller 810 through the bus 840. According to someaspects, each of the first memory module 820 and the second memorymodule 830 are examples of, or include aspects of, the memory module MMdescribed with reference to FIG. 1 . According to some aspects, thefirst memory module 820 includes memory ranks RK1 and RK2, and thesecond memory module 830 includes memory ranks RK3 and RK4.

According to some aspects, each of the first memory module 820 and thesecond memory module 830 include a plurality of data chips, a firstparity chip, and a second parity chip.

FIG. 27 is a block diagram of a mobile system including a memory moduleaccording to at least one embodiment.

Referring to FIG. 27 , according to some aspects, a mobile system 900includes an application processor (AP) 910, a connectivity module 920, amemory module (MM) 950, a nonvolatile memory device 940, a userinterface 930, and a power supply 970. According to some aspects, theapplication processor 910 includes a memory controller (MCT) 911.According to some aspects, the memory controller 911 includes the ECCengine 130 described with reference to FIG. 6 and the EMC 400 describedwith reference to FIG. 15 .

According to some aspects, the application processor 910 executesapplications, such as a web browser, a game application, a video player,etc. According to some aspects, the connectivity module 920 performswired and/or wireless communication with an external device.

According to some aspects, the memory module 950 stores data processedby the application processor 910. According to some aspects, the memorymodule 950 operates as a working memory. According to some aspects, thememory module 950 includes a plurality of semiconductor memory devices(MD) 951, 952, 953, and 95 q (where q is a positive integer greater thanthree). According to some aspects, the memory module 950 includes aregistered clock driver (RCD) 961.

According to some aspects, the semiconductor memory devices 951, 952,953, and 95 q include a plurality of data chips, a first parity chip,and a second parity chip. The semiconductor memory devices 951, 952,953, and 95 q are examples of, or include aspects of, the correspondingelements described with reference to FIG. 1 . Accordingly, in someembodiments, the memory controller 911 performs an ECC decoding on aread codeword from the memory module 950 to generate a first syndromeand a second syndrome and provides the EMC 400 with the second syndromeassociated with a correctable error. According to some aspects, the EMC400 predicts an occurrence of an uncorrectable error in a memory regionassociated with the correctable errors based on accumulating the secondsyndromes as a plurality of second syndromes and determines an errormanagement policy for the memory region.

According to some aspects, the nonvolatile memory device 940 stores aboot image for booting the mobile system 900. According to some aspects,the user interface 930 includes at least one input device, such as akeypad, a touch screen, etc., and at least one output device, such as aspeaker, a display device, etc. According to some aspects, the powersupply 970 supplies an operating voltage to the mobile system 900.

According to some aspects, the mobile system 900 or components of themobile system 900 are mounted using various types of packages. Someembodiments are implemented in various systems including a memory moduleand a memory controller that includes an ECC engine.

According to some aspects, the nonvolatile memory device 940 stores aboot image for booting the mobile system 900. According to some aspects,the user interface 930 includes at least one input device, such as akeypad, a touch screen, etc., and at least one output device, such as aspeaker, a display device, etc. According to some aspects, the powersupply 970 supplies an operating voltage to the mobile system 900.

According to some aspects, the mobile system 900 or components of themobile system 900 are mounted using various types of packages. Someembodiments are implemented in various systems including a memory moduleand a memory controller that includes an ECC engine.

While the inventive concept has been particularly shown and describedwith reference to embodiments thereof, it will be understood thatvarious changes in form and detail may be made therein without departingfrom the spirit and scope of the present disclosure.

What is claimed is:
 1. A memory controller configured to control amemory module including a plurality of data chips, a first parity chipand a second parity chip, the memory controller comprising: an errorcorrection code (ECC) engine; a central processing unit (CPU) configuredto control the ECC engine; and an error managing circuit, wherein theECC engine is configured to: during a read operation, perform an ECCdecoding on a read codeword set from the memory module to generate afirst syndrome and a second syndrome associated with a correctable errorin a user data set included in the read codeword set; correct thecorrectable error based on the first syndrome and the second syndrome;and provide the second syndrome to the error managing circuit, andwherein the error managing circuit is configured to: accumulate secondsyndromes associated with a plurality of correctable errors and obtainedthrough a plurality of read operations as a plurality of secondsyndromes; store the plurality of second syndromes; compare theplurality of second syndromes with an error pattern set; and predict anoccurrence of an uncorrectable error associated with the correctableerror in a memory region of the plurality of data chips based on thecomparison.
 2. The memory controller of claim 1, wherein the errormanaging circuit compares the plurality of second syndromes with atleast one of a first error pattern set and a second error pattern set,wherein the first error pattern set includes first error patternsassociated with input/output pads through which user data is input andoutput in the plurality of data chips, and wherein the second errorpattern set includes second error patterns associated with a burstlength of the user data.
 3. The memory controller of claim 2, whereinthe error managing circuit is further configured to, in response to apattern of the plurality of second syndromes corresponding to a riskyerror pattern that matches at least one of the first error pattern setand the second error pattern set: predict that a probability of theoccurrence of the uncorrectable error is greater than a referenceprobability; and provide the CPU with an alert signal associated withthe risky error pattern based on the prediction.
 4. The memorycontroller of claim 3, wherein the error managing circuit is furtherconfigured to generate a repair signal for repairing the memory regionbased on the plurality of second syndromes and the alert signal.
 5. Thememory controller of claim 3, wherein the CPU is further configured todetermine an error management policy for at least one memory regionbased in the alert signal.
 6. The memory controller of claim 1, whereinthe error managing circuit is further configured to: store the secondsyndrome associated with the correctable error; generate risky errorinformation predicting the occurrence of the uncorrectable error basedon comparing the plurality of second syndromes with the error patternset; provide an alert signal to the CPU based on the risky errorinformation; and provide a repair signal for repairing the at least onememory region based on the plurality of second syndromes to the CPU. 7.The memory controller of claim 1, wherein the error managing circuitincludes: a syndrome register configured to store the second syndrome; asyndrome accumulation register connected to the syndrome register andconfigured to store the second syndromes and to accumulate the secondsyndromes as the plurality of the second syndromes; a risky errorpattern register configured to store the error pattern set; a riskyerror determiner connected to the syndrome accumulation register andconfigured to generate risky error information predicting the occurrenceof the uncorrectable error by comparing the plurality of secondsyndromes with the error pattern set; an alert signal generatorconfigured to generate an alert signal associated with a risky errorpattern based on the risky error information and to provide the alertsignal to the CPU; and a repair signal generator configured to generatea repair signal for repairing the memory region based on the pluralityof second syndromes and the alert signal and to provide the repairsignal to the CPU.
 8. The memory controller of claim 7, wherein the CPUis further configured to perform a post package repair on the memoryregion based on the alert signal and the repair signal.
 9. The memorycontroller of claim 7, wherein the CPU is further configured to inhibita use of the memory region based on the alert signal and the repairsignal.
 10. The memory controller of claim 1, wherein the ECC engineincludes: an ECC memory configured to store a parity check matrix; andan ECC decoder configured to perform the ECC decoding and to provide thesecond syndromes to the error managing circuit.
 11. The memorycontroller of claim 10, wherein the ECC decoder is further configured todetermine that the correctable error occurs in the plurality of datachips in response to each of the first syndrome and the second syndromeincluding a non-zero value.
 12. The memory controller of claim 10,wherein: the read codeword set further includes, metadata associatedwith the user data set, first parity data associated with locations ofbit errors in the user data set, and second parity data associated witha quantity of the bit errors; the user data set is read from theplurality of data chips, the meta data and the first parity data areread from the first parity chip, and the second parity data is read fromthe second parity chip; and the parity check matrix includes a firstparity sub matrix, a second parity sub matrix, and a third parity submatrix.
 13. The memory controller of claim 12, wherein the ECC decoderis configured to: generate the first syndrome by performing a firstmatrix-multiplication operation on the read codeword set and the firstparity sub matrix; and generate the second syndrome by performing asecond matrix-multiplication operation on the read codeword set, thesecond sub parity matrix, and the third parity sub matrix.
 14. A memorysystem comprising: a memory module including a plurality of data chips,a first parity chip, and a second parity chip; and a memory controllerconfigured to control the memory module and including: an errorcorrection code (ECC) engine; a central processing unit (CPU) configuredto control the ECC engine; and an error managing circuit, wherein theECC engine is configured to: during a read operation, perform an ECCdecoding on a read codeword set received from the memory module togenerate a first syndrome and a second syndrome, wherein the readcodeword set includes a user data set, the second syndrome is associatedwith a correctable error, and the user data set includes the correctableerror; correct the correctable error in the user data set based on thefirst syndrome and the second syndrome; and provide the second syndrometo the error managing circuit, and wherein the error managing circuit isconfigured to: obtain second syndromes associated with a plurality ofcorrectable errors through a plurality of read operations; accumulatethe second syndromes as a plurality of second syndromes; store theplurality of second syndromes; compare the plurality of second syndromeswith at least one error pattern set; and predict an occurrence of anuncorrectable error in a memory region of the plurality of data chipsassociated with the plurality of correctable errors based on thecomparison.
 15. The memory system of claim 14, wherein the at least oneerror pattern set includes a first error pattern set and a second errorpattern set, wherein the first error pattern set includes first errorpatterns associated with input/output pads through which user data isinput and output in the plurality of data chips, and wherein the seconderror pattern set includes second error patterns associated with a burstlength of the user data.
 16. The memory system of claim 15, wherein theerror managing circuit is further configured to, in response to apattern of the plurality of second syndromes corresponding to a riskyerror pattern that matches at least one of the first error pattern setand the second error pattern set: predict a probability that theoccurrence of the uncorrectable error is greater than a referenceprobability; and provide an alert signal associated with the risky errorpattern to the CPU.
 17. The memory system of claim 14, wherein the errormanaging circuit is further configured to: store the second syndromeassociated with the correctable error; generate risky error informationpredicting the occurrence of the uncorrectable error based on comparingthe plurality of second syndromes with the at least one error patternset; provide an alert signal to the CPU based on the risky errorinformation; and provide a repair signal for repairing the memory regionbased on the plurality of second syndromes to the CPU.
 18. The memorysystem of claim 14, wherein: the read codeword set further includes metadata associated with the user data set, first parity data associatedwith locations of bit errors in the user data set, and second paritydata associated with a quantity of the bit errors; and the user data setis read from the plurality of data chips, the meta data and the firstparity data are read from the first parity chip, and the second paritydata is read from the second parity chip.
 19. A memory modulecomprising: a plurality of data chips configured to store a user dataset and meta data; a first parity chip and a second parity chipconfigured to store first parity data and second parity data,respectively, the first parity data and the second parity data beinggenerated based on the user data set and the meta data; and a bufferchip configured to provide the user data set and the meta data to theplurality of data chips based on a command and an address provided froman external memory controller and further configured to provide thefirst parity data and the second parity data to the first parity chipand the second parity chip, respectively, wherein the buffer chipincludes: an error correction code (ECC) engine; a memory managementunit configured to control the ECC engine; and an error managingcircuit, wherein the ECC engine is configured to: during a readoperation, perform an ECC decoding on a read codeword set received fromthe memory module to generate a first syndrome and a second syndrome,wherein the read codeword set includes the user data set, the secondsyndrome is associated with a correctable error, and the user data setincludes the correctable error; correct the correctable error in theuser data set based on the first syndrome and the second syndrome; andprovide the second syndrome to the error managing circuit, and whereinthe error managing circuit is configured to: obtain second syndromesassociated with a plurality of correctable errors through a plurality ofread operations; accumulate the second syndromes as a plurality ofsecond syndromes; store the plurality of second syndromes; compare theplurality of second syndromes with at least one error pattern set; andpredict an occurrence of an uncorrectable error in a memory region ofthe plurality of data chips associated with the correctable error basedon the comparison.
 20. The memory module of claim 19, wherein the atleast one error pattern set includes a first error pattern set and asecond error pattern set, wherein the first error pattern set includesfirst error patterns associated with input/output pads through whichuser data is input and output in the plurality of data chips, whereinthe second error pattern set includes second error patterns associatedwith a burst length of the user data, and wherein the error managingcircuit is configured to, in response to a pattern of the plurality ofsecond syndromes corresponding to a risky error pattern that matches atleast one of the first error pattern set and the second error patternset: predict that a probability of the occurrence of the uncorrectableerror is greater than a reference probability; and provide an alertsignal associated with the risky error pattern based on the prediction.